selected publications
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academic article
- SiC JFET dc Characteristics Under Extremely High Ambient Temperatures. IEICE Electronics Express. 1:523-527. 2010
- Power conversion with SiC devices at extremely high ambient temperatures. IEEE Transactions on Power Electronics. 22:1321-1329. 2007
- Switching characteristics of SiC JFET and Schottky diode in high-temperature dc-dc power converters. IEICE Electronics Express. 2:97-102. 2005